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Low-ESL MLCCs
Copyright. SAMSUNG ELECTRO-MECHANICS All rights reserved. SAMSUNG Low-ESL MLCCs [1] Why Low-ESL MLCC? [2] Comparison of Low-ESL MLCCs [3] Performance SAMSUNG Why Low-ESL MLCCs?, Real MLCC Real MLCC has capacitance, ESR and ESL Ideal MLCC > Capacitor - Z=1/jwC, Inductor - Z=jWL Real MLCC > Z=ESR+(jwL+1/jwC), C: Capacitance, ESR: Equivalent Series Resistance, ESL: Equivalent Series Inductance ESR of MLCC - Dielectric Resistance, In/external Resistanc ESL of MLCC - Current Variance > Flux Variance > EMF(Electromotive Force) Generated > Inductance ↑ (Inductance(L) = Φ/I) SAMSUNG Why Low-ESL MLCCs?, HF Impedance Low ESL of capacitor can decrease voltage fluctuations - Vout according to ESL # Buck Converter > Frequency: 3MHz, Vin: 4V, Vout: 1V, Duty ratio = 25% SAMSUNG Why Low-ESL MLCCs?, Set Trend 1 Low ESL MLCC can be used to reduce the impedance or the mounting area Set trends Main Set Trends - Improve Performance > Frequency ↗ - Higher Performance of SoC, GPU, MCU > Current ↗ - Package Minimize (Ploss ↓) > Operation Voltage ↘ - Set Minimize > Device Size & Amount ↘ Power Requirement for The Set Trends △V = △IZ (Z=Smaller Impedance) How to make Z Smaller [Method 1] Parallel Connection of MLCCs on same Line MLCCs in Parallel, Impedance Samller, But Mount Area ↗, Man. hour ↗ [Method 2] Use Low-ESL MLCC [ESL] 2012 MLCC: 300pH, 2012 VLC: 45pH SAMSUNG Why Low-ESL MLCCs?, Set Trend 2 Trend of PDN in Smartphone. (The same trend is expected for future automotive) As the performance of AP/SoC/GPU improves, 3T cap and low profile capacitors are increasing Category - Function / Capacitor(1) - Regulating / Capacitor(2) - Decoupling / Capacitor(3) - High Freq. Decoupling Category - Why Parallel MLCC / Capacitor(1) - Capacitance ↑ / Capacitor(2) - Inductance ↓ / Capacitor(3) - Inductance ↓ SAMSUNG Why Low-ESL MLCCs?, Set Trend 2 Function range of Capacitors in PDN PMIC - Impedance ↓ Freq. range, MLCC - Tens of kHz~ Hundreads of kHz, 3T - Hundreads of kHz~ Tens of MHz, LSC - Tens of MHz ↑ MLCC - Hundreads of kHz, 3 Terminal - Hundreads of kHz~Tens of MHZ, LSC - Tens of MHZ SAMSUNG Comparison of Low-ESL MLCCs, ESL by type Low ESL MLCC can be used to reduce the impedance or the mounting area MLCC: Multilayer Ceramic Capacitor LICC: Low Inductance Ceramic Capacitor SLIC: Super Low Inductance Capacitor 3T Cap.: 3 Terminal Capacitor VLC: Vertically Laminated Capacitor SAMSUNG Comparison of Low-ESL MLCCs, Principle Definition of inductance L=dΦ/dI, Φ=∫s Bds > As the area of the current Loop increases, the inductance increases. > When Current flows to Coil, B is Overwrapped and Φ increases. > Inductor Trendency of inductance Wide Current Path > Small Magnetic flux > Small Inductance Small Current Path > Small Current Area > Small Inductance Multiple Current Path > Canceling of Magnetic flux > Small Inductance SAMSUNG Comparison of Low-ESL MLCCs, Structure (LICC) Structure of LICC > External View & Internal ELectrodes, Internal Electrodes - 1st internal electrode, 2nd internal electrode Special Features of LICC > L=ul/A u=Permeability [H/m], A=Cross-section [m2] l=length [m] SAMSUNG Comparison of Low-ESL MLCCs, Structure (SLIC) Structure of SLIC > External View & Internal Electrodes, Internal Electrodes - 1st Internal electrode, 2nd internal electrode Special Features of SLIC > Inductance Cancellation, 8 Terminal Capacitor, Short Current Loop Lpart = 2L-2M/2 L: Self Inductance[H], M: Mutual Inductance [H] SAMSUNG Comparison of Low-ESL MLCCs, Structure (3T) Structure of 3T > External View & Internal Electrodes, Internal Electrodes - Small double current path Equivalent Circuit Model > Same Polarity 1&2, 3&4, Equivalent Circuit Model SAMSUNG Comparison of Low-ESL MLCCs, Structure (VLC) Structure of VLC > External View & Internal Electrodes, Internal Electrodes - 1st Internal electrode, 2nd internal electrode Special Features of VLC > Current Path of VLC - Vertically laminated structure to the circuit board - Very small double current loops by 3 terminals > Very Low ESL SAMSUNG Performance, Z by type 3 terminal capacitor shows lower ESL than MLCC and LICC ESL: Equivalent Series Inductance SAMSUNG Performance, Effect(Space) 3 terminal capacitor has ESL performance to replace 4 MLCCs (4MLCC) > (13T-Cap) > Space Saving 36% 11005mm 4.3uF 3T-Cap (Plane connection) 40603mm MLCC (1uF) SAMSUNG Performance, Effect(V ripple) 3T Cap shows smaller voltage ripple than MLCC PMIC 3Vdc - Decoupling Capacitor - V - I (3A, T=15ns) 11005mm 4.7uF MLCC vs. PMIC 3Vdc - Decoupling Capacitor - V - I (3A, T=15ns) 11005mm 4.3uF 3T Cap SAMSUNG Performance, Effect(V ripple) 3T Cap shows smaller voltage ripple than MLCC PMIC 3Vdc - Decoupling Capacitor - V - I (3A, T=15ns) 40603mm 1uF MLCC > Design-in (HHP) > PMIC 3Vdc - Decoupling Capacitor - V - I (3A, T=15ns) 11005mm 4.3uF 3T Cap Copyright. SAMSUNG ELECTRO-MECHANICS All rights reserved.