Introduction to Samsung Electro-Mechanics package substrate
The product is a package substrate that is used for the core semiconductors of mobile devices and PCs. It transmits electric signals between semiconductors and the main board, and protects expensive semiconductors from external stress. Compared with general substrates, as this substrate is a high-density circuit substrate containing more microcircuits, the assembly defects and incurred costs in directly bonding expensive semiconductors to the substrate can be reduced.
FCCSP(Flip Chip Chip Scale Package)
This is called Flip Chip Chip Scale Package (FCCSP) as semiconductor chips are upturned and connected to a board through a bump rather than wire bonding. It is mainly used for the application processor (AP) chips of mobile IT devices. Also Compared to WBCSP using Gold Wire, the process using Flip Chip can be applied to high-density semiconductors because the route of electrical signals is shorter, and larger input and output can be accommodated.
- Application
- Mobile Application Processor, Baseband and Others
Key Core Technologies
1. Bumping Structure
2. μBall Bump Method
- Available for Fine Bump Pitch
- Good for Small Bump Risk
- Good Quality for Bump Characteristics
Substrate Type
1. EPS (Embedded Passive Substrate) &
EDS (Embedded Die Substrate)
EPS/EDS is a substrate that can be mass-produced by embedding semiconductor passive elements and the IC, among other components, inside the board.
Decoupling capacitors are typically used to stabilize power supply voltage levels.By embedding the IC inside the board, package size and thickness can be reduced.
2. ETS(Embedded Trace Substrate)
ETS is a circuit board whose circuit pattern is in the insulating material. ETS has a coreless structure, which allows for the implementation of microcircuits without the need for additional cost. Layer Down is performed much easier (4L → 3L). Also As the etching process is not affected by the pattern width, the circuit width can be precisely controlled.
Lineup
Lineup by Specification
Mass Production Sample Available
Routing Density | Build-Up Line Width / Space | 7 / 8um | 6 / 7um |
---|---|---|---|
BVH / Pad Registration | 40 / 67um | 37 / 60um | |
SRO Diameter SR Registration |
45 ± 10um | 40 ± 10um | |
FC Bump Pitch (Peripheral) | 40um | 35um | |
FC Bump Pitch (Area) | 90um | 80um | |
Low Z-Height | Core / PPG Thickness | 40 / 18um | 35 / 15um |
SR Thickness | 10 ± 4um | 8 ± 3um |
WBCSP(Wire Bonding Chip Scale Package)
This is a semiconductor chip the size of which is more than 80% of that of the finished part. It is called WBCSP (Wire Bonding CSP) because a gold wire bonding method is applied to connect the semiconductor chip and the PCB.
A gold wire is used to connect the chip and PCB, and multi-packaging is possible, which makes the product mainly applicable for memory chips. In particular, UTCSP (Ultra Thin CSP) products are made with a thickness of 0.13mm or thinner. With a high degree of freedom in the chip to PCB connection, multi-chip packaging is made possible, and better performance is realized compared with other products of the same thickness.
- Application
- Mobile Equipment Memory
Lineup
Lineup by Specification
General WBCSP Road Map of HVM / Sample Product
Mass Production Sample AvailableRouting Density | Bond Finger Pitch | 55P (25 / 12, Ni 3) (Mass Production) | 50P (20 / 10, Ni 2) (Sample Available) | |
---|---|---|---|---|
Line Width / Space | mSAP (Cu T 14) |
12 / 16um(Mass Production) | 10 / 15um(Sample Available) | |
ETS (Cu T 13) |
7 / 8um (Mass Production) | 6 / 7um (Sample Available) | ||
Via / Pad Size | mSAP | 50 / 90um(Mass Production) | 45 / 85um(Sample Available) | |
ETS | 40 / 65um (Mass Production) | 37 / 60um (Sample Available) | ||
SRO alignment | ± 12.5um (Mass Production) | ± 10um (Sample Available) | ||
Min. SR Open size | 45um (Mass Production) | 40um (Sample Available) |
Lineup by Structure & Z-Height
Mass Production Sample AvailableLayer count | Structure | Thickness | |
---|---|---|---|
2Layer (Mass Production) | Cored (Mass Production) | 80um (Mass Production) | 75um |
3Layer (Mass Production) | Coreless (Mass Production) | 80um (Mass Production) | 75um |
ETS (Mass Production) | 120um (Mass Production) | 100um | |
4Layer (Mass Production) | Cored (Mass Production) | 120um (Mass Production) | 110um |
Coreless (Mass Production) | 110um (Mass Production) | 100um | |
ETS (Mass Production) | 160um (Mass Production) | 140um | |
6Layer (Mass Production) | Cored (Mass Production) | 220um (Mass Production) | 180um |
Coreless (Mass Production) | 200um (Mass Production) | 180um |
SiP(System in Package)
This product is developed by realizing complex functions into one system by mounting multiple ICs and passive components in a package. It is also used in products such as Power Amplifiers (PA) and has heat dissipation characteristics. The product series include Flip-Cip SiP and Coreless.
- Application
- PA(Power Amplifier), PAMID (Power Amplifier Module with Integrated Duplexer), FEMID(Front-End Module with Integrated Duplexer), SAW Filter, BAW Filter, Various RF Parts like Diversity FEM and Switch
Features
1. Miniaturization
Can realize small packages as multiple ICs and passive components are integrated into one module.
- 1. Sip
- 2. Die 1
- 3. Die 2
- 4. Die 3
2. Thin Substrate
Can realize 0.2mm thin substrate (based on a 6-layer substrate) by securing the driving capability of ultrathin sheets.
Key Core Technologies
1. Coreless RF-SiP
Signal characteristics can be enhanced by controlling Electromagnetic Interference (EMI) and the parasitic inductance by lowering the insulation thickness through the application of the coreless method. This serves as the basis for materializing thin substrates.
2. ENEPIG Surface Treatment
The ENEPIG surface treatment technology has the following characteristics.
1) Thin Ni ENEPIG
- RF performance is possible based on the Ni thickness.
- Ni Thickness 0.1um ENIG/ENEPIG
- Gold, Nickel, Copper, Palladium
- Ni Thickness 0.1um Thin Ni ENEPIG
- Gold, Nickel, Palladium, Copper
- * ENIG : Electroless Nickel Immersion Gold
- * ENEPIG : Electroless Nickel Electroless Palladium Immersion Gold
2) Selective ENEPIG
- Selective ENEPIG allows the treatment of different surface types on the same board. (ENEPIG + OSP)
- ENEPIG + OSP
- ENEPIG, OSP
- * OSP : Organic Solderability Preservative
Lineup
Lineup by Specification
Mass Production Sample AvailableLayer Structure | Cored | 2L / 4L / 6L / 8L / 10L | + 12L / 14L |
---|---|---|---|
Coreless | 5L / 6L / 7L / 8L | + 4L / 9L / 10L | |
Line Width / Space | 12 / 16um | 10 / 15um | |
Bump Pitch | 130um | 105um | |
Surface Finish | Direct Au, Thin ENEPIG, Selective ENEPIG | Direct Au, Thin ENEPIG, Selective ENEPIG |
FCBGA(Flip Chip Ball Grid Array)
The product is a high-density package substrate that is used to connect a high-integration semiconductor chip to a main board. The semiconductor chip and the package substrate are connected with Flip Chip Bump, and fine matching between layers is required due to the miniaturization of the substrate circuit and high multi-layer. In particular, Large Body Size and high multi-layer (~75x75㎜, 20L) technology are required to respond to High Performance Computing.
- Application
- CPU, GPU, Server CPU, AI Accelerator, Automotive, Network, Game Console, D-TV
Lineup
FCB is available in Standard Core, Thin Core type products.
Mass Production Sample AvailableCore Thickness (um) | Line Width /Space Bump Pitch (Mass Volume) |
Layer Counts | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|
4L | 6L | 8L | 10L | 12L | 14L | 16L | 18L | 20L | 22L | |||
Standard Core | 1200 | 9 / 12um 90um |
||||||||||
800 | ||||||||||||
600 | ||||||||||||
400 | ||||||||||||
Thin Core | 250 | 9 / 12um 100um |
||||||||||
200 | ||||||||||||
100 |